Apple’s Optimization of LLMs for Edge-Based Applications
Apple is addressing the challenge of effectively managing Large Language Models (LLMs) that surpass the existing Dynamic Random-Access Memory (DRAM) capacity. Apple recently released a...
Tag : DRAM
Samsung Develops Industry’s First GDDR7 DRAM to Unlock the Next Generation of Graphics Performance
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, announced that it has completed development of the industry’s first Graphics Double Data Rate 7 (GDDR7) DRAM....
Samsung Begins Mass Production of Comprehensive Automotive Memory Solutions for Next-Generation Autonomous Electric Vehicles
Samsung reinforces its automotive memory lineup for advanced infotainment and autonomous driving systems with high-performance SSDs, graphics DRAM, DDR4 DRAM and UFS products Delivering server-class...
SK hynix Becomes the Industry’s First to Ship 24Gb DDR5 Samples
SK hynix Inc. announced that it has shipped samples of 24 Gigabit (Gb) DDR5* DRAM with the industry’s largest density for a single DRAM chip....
Micron to Open State-of-the-Art Memory Design Center in Atlanta
Micron Technology, Inc, one of the world’s largest semiconductor manufacturers and the only U.S.-based manufacturer of memory, announced plans for its new memory design center...
Samsung Develops Industry’s First LPDDR5X DRAM
Samsung’s LPDDR5X DRAM will provide over 1.3x faster processing speeds and consume nearly 20% less power than the previous LPDDR5 solution The LPDDR5X solution will...
Innodisk Ultra Temperature DDR4 DRAM Module Beats the Heat up to 125 Degrees Celsius
Innodisk has just released the first-of-its-kind Ultra Temperature DDR4 DRAM module that can operate from a chilling -40 degrees Celsius to a scorching 125 degrees...
SK hynix Announces Development of HBM3 DRAM
SK hynix Inc. announced that it has become the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM....
Efinix Selects Winbond HyperRAM for its Ti60 F100 Platform to Drive a New Generation of Compact, Ultra-Low Power AI and IoT Devices
– Winbond’s 256Mb HyperRAM 2.0e KGD (Known Good Die) provides the Efinix Titanium Ti60 F100 FPGA with the performance, low power consumption and small size...
Samsung Starts Mass Production of Most Advanced 14nm EUV DDR5 DRAM
Samsung’s new five-layer EUV process enables the industry’s highest DRAM bit density, enhancing productivity by approximately 20% Based on the latest DDR5 standard, Samsung’s 14nm...