Faraday Technology Corporation, a leading ASIC design service and IP provider, announced its LPDDR4 and LPDDR4X combo PHY IP up to 4.2Gbps is now available in Samsung’s 14nm LPC process. The silicon proven solution provides smaller area, lower power, and high bandwidth for applications such as multi-media, AR/VR, AI edge computing, AIoT, IIoT, Robot, MFP, SSD, 5G and networking.
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“Faraday has accumulated abundance of DDR3/4 and LPDDR3/4 success cases in nodes ranging from 55nm to 28nm across numerous applications. We can now offer Samsung Foundry Customers the benefit of our broad DDR experience. We expect to deliver more high-value, cost effective IP for customers based on Samsung FinFET technology”
Faraday’s newly launched LPDDR4/4X solution, verified in conjunction with Faraday LPDDR4/4X Controller, is compliant with JEDEC standard and supports DFI 4.0. The highly compact design provides additional flexibility with two hardened configurations supporting both in-line rectangular and corner-edge placement. The built-in PLL enables improved input clock jitter performance. The solution also supports both KGD or packaged, single or multi DRAM chips.
“We are pleased to launch the LPDDR4/4X solution in the highly cost-effective Samsung 14LPC process,” . “Faraday has accumulated abundance of DDR3/4 and LPDDR3/4 success cases in nodes ranging from 55nm to 28nm across numerous applications. We can now offer Samsung Foundry Customers the benefit of our broad DDR experience. We expect to deliver more high-value, cost effective IP for customers based on Samsung FinFET technology,” he added.
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