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Avalanche Technology Announces Industry’s First 1Gb STT-MRAM For Aerospace Applications

Avalanche Technology Announces Industry’s First 1Gb STT-MRAM For Aerospace Applications
New family of Gigabit-density Parallel x32 Space Grade P-SRAM represent the most reliable memory devices developed specifically for use in space

Avalanche Technology, the leader in next generation MRAM technology, announced its new 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest Spin Transfer Torque Magneto-resistive RAM (STT-MRAM) technology. These new products simplify the system design, and by unifying the memory architecture, reduce the power and size requirements of the system, improving overall system reliability and life.

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“We welcome the birth of advanced memory technology to the space and hi-rel industries. Nearly all modern electronic systems rely upon a triad of basic functions: processor, memory and interface elements. These three functions are integrated to provide the common microcontroller which forms the basis of the majority of commercial and industrial electronic systems over the past several decades. The space industry has struggled against obsolete business models, limited agility and industry paradigms to remain in the same decade as the commercial industry in all three functional element areas. The arrival of this new technology from Avalanche marks an inflection point for space system designers by allowing modern architectures, previously believed to be impractical, to now be considered. With this development, Avalanche Technology is leading an evolution toward a new level of performance versus cost for modern space electronic systems” said Tim Canales, President/CTO at DDES.

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“With this new product release, Avalanche is changing how high-performance space systems are designed, by reducing the need for external EDACs and eliminating multiple different types of memory,” said Petro Estakhri, CEO and President at Avalanche Technology. “The new 1Gb P-SRAM device enables customers to design unified memory architecture systems for high reliability aerospace applications, in extremely small form factors.”

The Parallel x32 Space Grade series is offered in 512Mb, 1Gb, 2Gb and 4Gb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. Data is always non-volatile with >10^14 write cycles endurance and 10-year retention at 125°C. All four density options are available in a small footprint 142-Ball FBGA (17mm x 11mm) package. Additionally, the same 512Mb and 1Gb devices will also be available with an Octal/Quad SPI interface in a 36-Ball FBGA (17mm x 11mm) package. These memory devices are offered in space grade (-40°C to 125°C) operating temperature range. Every unit goes through a 48-hour burn-in before it is shipped to customers.

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