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Mitsubishi Electric to Ship Samples of Wider-temperature-range CWDM 100Gbps (53Gbaud PAM4) EML Chip for Data Centers

Mitsubishi Electric to Ship Samples of Wider-temperature-range CWDM 100Gbps (53Gbaud PAM4) EML Chip for Data Centers
Will reduce power consumption and costs of 400 Gbps optical transceivers for data centers

Mitsubishi Electric Corporation announced that it will begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip for coarse wavelength division multiplexing (CWDM) on November 1. The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers. Thanks to the new EML’s operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.

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1) High-speed, wider-temperature operation with unique hybrid waveguide structure

  • Unique hybrid waveguide structure (Fig. 1) combines a buried heterostructure laser diode for high optical-output-power and a high-mesa waveguide electro absorption modulator (EAM) for a high extinction ratio and wide frequency range.
  • 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C (Fig. 2) due to optimized design parameters for the laser diode and modulator sections.

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