Gallium Nitride (GaN) Power ICs expected to take share from legacy silicon chips in $13B power semiconductor market
Navitas Semiconductor, the industry leader in gallium nitride (GaN) power ICs, announced participation in the 21st Annual CJS Securities “New Ideas” (Virtual) Summer Conference, on July 13th, 2021. Gene Sheridan, co-founder and CEO, and Todd Glickman, Sr. VP Finance will provide an overview of the company; discuss its competitive position and its strategies for growth.
Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These GaNFast™ power ICs become easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions.
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“With over 135 customer GaN chargers in production, and over 120 patents issued and pending, we believe have created a multi-year, highly-protected lead for Navitas,” noted Sheridan. “We’re off to a great start, and ready to tap into a $13 billion GaN electrification opportunity that goes far beyond chargers and adapters, and into data centers, renewable with a focus on solar, plus electric vehicle and the broader e-mobility segments.”
Navitas has already shipped over 20M GaNFast power ICs to tier-1 companies including Dell, Lenovo, Xiaomi, LG, OPPO and more, with over 135 customer designs in mass production and over 150 more in development. Navitas estimates that GaN can impact up to 2.6 Gtons of CO2 reduction annually by 2050.
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