New 8nm RF chip architecture provides up to 35 percent increase in power efficiency and 35 percent decrease in logic area compared to 14nm RF
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, introduces its newest radio frequency (RF) technology based on 8-nanometer (nm) process.
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“As 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices.”
This cutting-edge foundry technology is expected to provide a “one chip solution,” specifically for 5G communications with support for multi-channel and multi-antenna chip designs. Samsung’s 8nm RF platform extension is expected to expand the company’s leadership in the 5G semiconductor market from sub-6GHz to mmWave applications.
Samsung’s 8nm RF process technology is the latest addition to an already broad portfolio of RF-related solutions, including 28nm- and 14nm-based RF. The company has established its RF market leadership through the shipping of more than 500 million mobile RF chips for premium smartphones since 2017.
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“Through excellence in innovation and process manufacturing, we’ve reinforced our next-generation wireless communication offerings,” said Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. “As 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices.”
Samsung’s New RFeFET™ Architecture
With continued scaling to advanced nodes, digital circuits have improved significantly in performance, power consumption, and area (PPA), whereas the analog/RF blocks haven’t enjoyed such an improvement due to degenerative parasitics such as increased resistance from narrow line width. As a result, most communications chips tend to see degraded RF characteristics such as deteriorated amplification performance of reception frequency and increased power consumption.
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To overcome the analog/RF scaling challenges, Samsung has developed a unique architecture exclusive to 8nm RF named RFextremeFET (RFeFET™) that can significantly improve RF characteristics while using less power. In comparison to 14nm RF, Samsung’s RFeFET™ supplements the digital PPA scaling and restores the analog/RF scaling at the same time, thereby enabling high-performance 5G platforms.
Samsung’s process optimization maximizes channel mobility while minimizing parasitics. As the performance of RFeFET™ is greatly improved, the total number of transistors of RF chips and the area of analog/RF blocks can be reduced.
Compared to 14nm RF, Samsung’s 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET™ architectural innovation.
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