GaNFast and GeneSiC technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips.
Navitas Semiconductor, the industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technologies, has announced that Dan Kinzer, the company’s co-founder and COO/CTO, will present a keynote speech on next-generation semiconductor technology at the forthcoming IEEE WiPDA (Wide Bandgap Power Devices & Applications) workshop.
Taking place from November 7th-9th 2022, the ninth WiPDA Workshop provides a forum for device scientists, circuit designers and application engineers from the Power Electronics & Electron Devices Societies to share wide bandgap (WBG) technology updates, research findings, experience and potential applications.
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Mr. Kinzer’s keynote “High-speed GaN and SiC: $22B of pure-play power semiconductors” spotlights key market drivers and technology developments in GaN and SiC as they continue to displace legacy silicon in a growing range of applications including mobile ultra-fast chargers, data centers, renewables and EVs.
An additional technical paper, “Advancement in Integration for GaN Power ICs: Autonomous Protection and Loss-Less Sensing”, will be presented by Tom Ribarich, Navitas’ Sr. Director Strategic Marketing.
Navitas’ latest family of 650 V GaNSense half-bridge ICs offer a revolutionary step forward in integration, integrating two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation. This single-package solution reduces component count and footprint by over 60% compared to existing discretes, which cuts system cost, size, weight, and complexity.
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Additionally, new GeneSiC MOSFETs range from 750 V to 6.5 kW, and deliver the industry’s highest figures-of-merit for high temperature, high-speed switching. Trench-assisted planar-gate MOSFETs, enabling 30% energy savings, 25°C cooler operation and 3x longer life. The SiC portfolio is completed with a broad range of high-performance Schottky MPS™ diodes, from 650 V to 3.3 kV.
“The IEEE WiPDA Workshop is a prestigious event, and it is a great honor to be asked to share key insights with leading experts in the field of WBG technologies,” said Mr. Kinzer. “Navitas delivers critical technological advantages in a $22 billion market opportunity.” For 30 years, Mr. Kinzer has led R&D at semiconductor and power electronics companies at the VP level or higher. His experience includes developing advanced power device and IC platforms, wide bandgap GaN and SiC device design, IC and power device fabrication processes, advanced IC design, semiconductor package development and assembly processes, and design of electronic systems. Before co-founding Navitas, Mr. Kinzer served as VP R&D, VP Advanced Product Development, and Chief Technologist at International Rectifier (IR sold to Infineon for $3B), and SVP Product & Technology Development & CTO at Fairchild Semiconductor (Fairchild sold to onsemi for $2.4B). He holds over 180 US patents, and a BSE degree in Engineering Physics from Princeton University.
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