Discover what’s driving the next wave of business-critical applications, from 5G to IoT and AI solutions.
Scheduled to broadcast Q4/2021, the award-winning series, Advancements with Ted Danson, will focus on recent breakthroughs in flash memory architecture.
Flash memory started out as single-level cell (SLC) technology that has advanced to the current quad-level cell (QLC) based on 3D NAND technology. With each generation, flash capacity has grown larger, and costs have become cheaper, but its speed has also become significantly slower. This bottleneck for QLC NAND prevents its use in applications that require the most demanding levels of performance.
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Advancements will focus on NEO SEMICONDUCTOR, 2020 winners of the Flash Memory Summit’s Most Innovative Flash Memory Startup Award. Audiences will learn how NEO SEMICONDUCTOR’s X-NAND architecture solves the bottleneck by increasing the planes of the array using the existing page buffer size, which increases the parallelism for read and write operations, as a result, achieving QLC density with SLC speed.
Hearing from experts in the field, spectators will see how X-NAND provides high-speed, high-density, and low-cost data storage and what makes this a key technology for everything from 5G to IoT and AI applications.
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“Our team had a vision to take high-speed NAND flash memory beyond what is possible today and design a next generation architecture that can achieve higher levels of performance in a smaller footprint while reducing cooling and power efficiencies,” said Andy Hsu, founder and CEO, NEO SEMICONDUCTOR. “I am very proud of what our patented technology can achieve as it can fuel the next wave of demanding customer applications and deliver a new level of economics in manufacturing high speed data storage solutions.”
The show will explore how NEO SEMICONDUCTOR’s innovation empowers the world’s largest flash memory silicon manufacturers to make a giant leap forward in shrinking the size of the memory chip, while increasing performance without impacting the rest of the intellectual property in the NAND flash production process.
“The X-NAND architecture is a major breakthrough in 3D NAND flash memory. It enables the array to be divided into 16-64 planes rather than the conventional 4 planes, providing expanded ultra-high speed performance paths with zero manufacturing cost increase,” said Senior Producer, DJ Metzer.
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